Non-volatile memory device

Details Non-volatile memory device Non-volatile memory device

2011-08-16

2011-08-16

Phung, Anh (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180

Reexamination Certificate

active

08000149

ABSTRACT:
The present invention relates to a method of operating a non-volatile memory device. In an aspect of the present invention, the method includes performing a first program operation on the entire memory cells, measuring a first program speed of a reference memory cell, storing the first program speed in a program speed storage unit, repeatedly performing a program/erase operation until before a number of the program/erase operation corresponds to a specific reference value, when the number of the program/erase operation corresponds to the specific reference value, measuring a second program speed of the reference memory cell, calculating a difference between the first program speed and the second program speed, resetting a program start voltage according to the calculated program speed difference, and performing the program/erase operation based on the reset program start voltage.

REFERENCES:
patent: 5532971 (1996-07-01), Tanaka et al.
patent: 6940756 (2005-09-01), Mastroianni et al.
patent: 7466588 (2008-12-01), Mylly
patent: 2001/0040836 (2001-11-01), Mori et al.
patent: 2008/0253181 (2008-10-01), Edahiro et al.
patent: 1020030031652 (2003-04-01), None
patent: 1020060023798 (2006-03-01), None

Affiliated with

Also associated with

Rating

Non-volatile memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2728813