Non-volatile memory comprising means for distorting the...

Details Non-volatile memory comprising means for distorting the... Non-volatile memory comprising means for distorting the...

2007-07-31

2007-07-31

Tran, Michael (Department: 2827)

Static information storage and retrieval

Read only systems

Resistive

C365S195000

Reexamination Certificate

active

11106048

ABSTRACT:
The present invention relates to a non-volatile memory comprising a memory array comprising functional memory cells and non-functional memory cells linked to at least one non-functional word line. A word line address decoder comprises a special decoding section linked to the non-functional word line, for selecting the non-functional word line when a functional word line is read-selected, such that non-functional memory cells are selected simultaneously with the functional memory cells, and distort the reading of the functional memory cells. Application particularly to integrated circuits for smart cards.

REFERENCES:
patent: 6351418 (2002-02-01), Tomohiro
patent: 6498851 (2002-12-01), Wong
patent: 6792528 (2004-09-01), Hou
patent: 2002/0101763 (2002-08-01), Hosogane et al.
patent: 2005/0192453 (2005-09-01), Eckl et al.
patent: 2006/0112418 (2006-05-01), Bantz et al.
patent: 0 645 774 (1995-03-01), None
patent: WO 98/53459 (1998-11-01), None

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