Non-volatile memory cells using only positive charge to store da

Details Non-volatile memory cells using only positive charge to store da Non-volatile memory cells using only positive charge to store da

1995-07-03

1998-04-21

Nguyen, Viet Q.

Static information storage and retrieval

Floating gate

Particular connection

3651851, 257318, 257321, G11C 1604, H01L 2978

Patent

active

057425426

ABSTRACT:
An improved EEPROM structure is provided which has a longer data retention period. This is achieved by utilizing only positive charges to store data on the floating gate. The EEPROM structure includes a write select transistor (112), a read select transistor (120), and a floating gate sense transistor (126). The source of the write select transistor is capacitively coupled to the floating gate of the floating gate sense transistor via a tunnel oxide layer (145). The floating gate of the floating gate sense transistor is also capacitively coupled to a control gate line (CG) via a gate oxide layer (153). The sense transistor is formed as an enhancement transistor so as to allow the EEPROM structure to be operated in a region where the floating gate potential is positive for both programmed and erased conditions, thereby using only the positive charges to store data.

REFERENCES:
patent: 4616245 (1986-10-01), Topich
patent: 4813018 (1989-03-01), Kobayashi
patent: 4912534 (1990-03-01), Tanaka
patent: 4924278 (1990-05-01), Logie
patent: 5005155 (1991-04-01), Radjy
patent: 5170373 (1992-12-01), Doyle
patent: 5331590 (1994-07-01), Josephson

Affiliated with

Also associated with

Rating

Non-volatile memory cells using only positive charge to store da does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile memory cells using only positive charge to store da, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile memory cells using only positive charge to store da will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2065065