Non-volatile memory cells employing a transition metal oxide...

Details Non-volatile memory cells employing a transition metal oxide... Non-volatile memory cells employing a transition metal oxide...

2005-07-12

2008-09-02

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S004000, C257SE45002

Reexamination Certificate

active

07420198

ABSTRACT:
Non-volatile memory cells employing a transition metal oxide layer as a data storage material layer are provided. The non-volatile memory cells include a lower and upper electrodes overlapped with each other. A transition metal oxide layer pattern is provided between the lower and upper electrodes. The transition metal oxide layer pattern is represented by a chemical formula MxOy. In the chemical formula, the characters “M”, “O”, “x” and “y” indicate transition metal, oxygen, a transitional metal composition and an oxygen composition, respectively. The transition metal oxide layer pattern has excessive transition metal content in comparison to a stabilized transition metal oxide layer pattern. Methods of fabricating the non-volatile memory cells are also provided.

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