Non-volatile memory cell with multiple resistive sense...

Details Non-volatile memory cell with multiple resistive sense... Non-volatile memory cell with multiple resistive sense...

2011-04-26

2011-04-26

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Interconnection arrangements

C365S051000, C365S148000, C365S158000, C365S163000, C365S171000

Reexamination Certificate

active

07933136

ABSTRACT:
A non-volatile memory cell array and associated method of use. In accordance with various embodiments, the array includes a plurality of programmable resistive sense elements (RSEs) coupled to a shared switching device. The switching device has a common source region and multiple drain regions, each drain region connected to an associated RSE from said plurality of RSEs.

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