Non-volatile memory cell with improved programming technique...

Details Non-volatile memory cell with improved programming technique... Non-volatile memory cell with improved programming technique...

2007-01-23

2008-11-18

Elms, Richard (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S154000, C365S185050, C365S185140, C365S202000

Reexamination Certificate

active

07453726

ABSTRACT:
A single 4-transistor non-volatile memory (NVM) cell includes a shared static random access memory cell. The NVM cell utilizes a reverse Fowler-Nordheim tunneling programming technique that, in combination with the shared SRAM cell structure, allows an entire cell array to be programmed at two cycles. A single NVM cell approach with shared SRAM allows a 50% area reduction with an insignificant increase in program time.

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