Non-volatile memory cell with improved programming technique

Details Non-volatile memory cell with improved programming technique Non-volatile memory cell with improved programming technique

2007-01-23

2007-01-23

Zarabian, Amir (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S154000, C365S185190

Reexamination Certificate

active

11183198

ABSTRACT:
A non-volatile memory (NVM) cell splits its basic function, i.e. program, erase, read and control, among a four PMOS transistor structure, allowing independent optimization of each function. The cell structure also includes an embedded static random access memory (SRAM) cell that utilizes a latch structure to preprogram data to be written to the cell. The programming method for the cell utilizes a reverse Fowler-Nordheim tunneling mechanism with a very small programming current, allowing an entire NVM array to be programmed at one cycle.

REFERENCES:
patent: 6137723 (2000-10-01), Bergemont et al.
patent: 6985386 (2006-01-01), Mirgorodski et al.
patent: 6992927 (2006-01-01), Poplevine et al.
patent: 7020027 (2006-03-01), Poplevine et al.
patent: 7042763 (2006-05-01), Mirgorodski et al.

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