Non-volatile memory cell with gated diode and MOS transistor...

Details Non-volatile memory cell with gated diode and MOS transistor... Non-volatile memory cell with gated diode and MOS transistor...

2005-03-01

2005-03-01

Phan, Trong (Department: 2818)

Static information storage and retrieval

Floating gate

Particular connection

C365S185180, C365S185290

Reexamination Certificate

active

06862216

ABSTRACT:
A non-volatile memory cell including a gated diode and a single readout transistor, methods for programming and reading out such a cell, and a memory including an array of such cells. The readout transistor is an MOS transistor. The transistor and gated diode are formed in a volume of semiconductor material of one type, and share a source region, a control gate, and a floating gate. The transistor has a drain region formed of semiconductor material of one type and the diode has a drain region formed of semiconductor material of the opposite type.

REFERENCES:
patent: 4698787 (1987-10-01), Mukherjee et al.
patent: 6137723 (2000-10-01), Bergemont et al.
patent: 6282123 (2001-08-01), Mehta
patent: 6795348 (2004-09-01), Mihnea et al.
patent: 20040080982 (2004-04-01), Roizin

Affiliated with

Also associated with

Rating

Non-volatile memory cell with gated diode and MOS transistor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile memory cell with gated diode and MOS transistor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile memory cell with gated diode and MOS transistor... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3436385