Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – active junction...
Reexamination Certificate
2005-08-24
2009-06-09
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, active junction...
C257SE23147
Reexamination Certificate
active
07544968
ABSTRACT:
An MOS transistor is programmed in a non-volatile memory cell. A storage capacitor in the non-volatile memory cell is used to enhance programming efficiency by providing additional charge to the programming terminal of the MOS transistor during breakdown of the gate dielectric, thus avoiding soft programming faults. In a particular embodiment the storage capacitor is a second MOS transistor having a thicker gate dielectric layer than the dielectric layer of the programmable MOS transistor.
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Ahrens Michael G.
Hart Michael J.
Jeong Jongheon
Karp James
Toutounchi Shahin
Hewett Scott
Movva Amar
Smith Bradley K
Xilinx , Inc.
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