Non-volatile memory cell using a crystalline storage element wit

Details Non-volatile memory cell using a crystalline storage element wit Non-volatile memory cell using a crystalline storage element wit

1981-12-31

1985-08-13

Larkins, William D.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 235, 357 4, 357 6, 365149, H01L 2978, G11C 1140

Patent

active

045353492

ABSTRACT:
The present invention relates to storage devices which utilize a floating single crystal electrode onto which elcetrons are injected to vary the capacitance of a device which includes capacitance contributions from a pair of insulator regions and that resulting from the uncharged floating single crystal electrode. The memory cell includes at least a pair of other electrodes one of which is utilized to provide two voltage levels to cause injection of electrons and provide an interrogation or read pulse. The other of the pair is utilized as a sense electrode which capacitively senses current when a read pulse is applied to the device via a control electrode. A second embodiment utilizes a pair of injector electrodes, a separate control electrode and a sense electrode in addition to the single crystal floating electrode. A memory array incorporating a device using the single crystal floating electrode is also disclosed.

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