Non-volatile memory cell structure and process for forming same

Details Non-volatile memory cell structure and process for forming same Non-volatile memory cell structure and process for forming same

1995-06-07

1996-09-17

Nguyen, Viet Q.

Static information storage and retrieval

Floating gate

3651851, 36518514, 36518527, 36518528, G11C 1700, G11C 700

Patent

active

055575650

ABSTRACT:
A non-volatile split-gate memory cell 8 which can be programmed with only a five volt power supply and is fabricated using standard transistor processing methods, comprises a semiconductor substrate 10 with a source 12 and a drain 14 region separated by a channel region 16. A conductive floating gate 18 is formed over a portion 16a of the channel region 16 and separated by a FAMOS oxide 20. A conductive control gate 22 is formed over but electrically insulated from the floating gate 18 and over a second portion 16b of the channel region 16. The control gate 22 is separated from the second portion of the channel 16b by a pass oxide 26 which is thicker than the FAMOS oxide 20. Other embodiments and processes are also disclosed.

REFERENCES:
patent: 4729115 (1988-03-01), Kauffman et al.
patent: 4949140 (1990-08-01), Tam
patent: 5016215 (1991-05-01), Tigelaar
patent: 5021999 (1991-06-01), Kohda et al.
patent: 5262987 (1993-11-01), Kojima

Affiliated with

Also associated with

Rating

Non-volatile memory cell structure and process for forming same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile memory cell structure and process for forming same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile memory cell structure and process for forming same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-419206