Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2008-10-07
2009-10-27
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185170, C365S185190
Reexamination Certificate
active
07609557
ABSTRACT:
The present disclosure includes various method, device, and system embodiments for reducing non-volatile memory cell read failures. One such method embodiment includes performing a first read operation, using an initial read potential, to determine a state of a selected memory cell in a string of non-volatile memory cells. This method includes determining whether the state of the selected memory cell is an incorrect state by performing a first check using a data checking technique, and if the incorrect state is determined, performing a number of subsequent read operations using read potentials stepped to a higher and a lower read potential to a particular count of read operations.
REFERENCES:
patent: 6768673 (2004-07-01), Hsia et al.
patent: 6839875 (2005-01-01), Roohparvar
patent: 6937522 (2005-08-01), Funaki
patent: 6972993 (2005-12-01), Conley et al.
patent: 7012835 (2006-03-01), Gonzalez et al.
patent: 2003/0179616 (2003-09-01), Wohlfahrt et al.
patent: 2005/0024943 (2005-02-01), Chen et al.
patent: 2005/0081114 (2005-04-01), Ackaret et al.
patent: 2005/0081132 (2005-04-01), Chen
patent: 2005/0094440 (2005-05-01), Tu et al.
patent: 2005/0172065 (2005-08-01), Keays
patent: 2005/0268203 (2005-12-01), Keays et al.
patent: 2006/0114729 (2006-06-01), Tanaka et al.
Brooks, Cameron & Huebsch PLLC.
Ho Hoai V
Lappas Jason
Micro)n Technology, Inc.
LandOfFree
Non-volatile memory cell read failure reduction does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Non-volatile memory cell read failure reduction, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile memory cell read failure reduction will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4115501