Non-volatile memory cell read failure reduction

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185170, C365S185190

Reexamination Certificate

active

07609557

ABSTRACT:
The present disclosure includes various method, device, and system embodiments for reducing non-volatile memory cell read failures. One such method embodiment includes performing a first read operation, using an initial read potential, to determine a state of a selected memory cell in a string of non-volatile memory cells. This method includes determining whether the state of the selected memory cell is an incorrect state by performing a first check using a data checking technique, and if the incorrect state is determined, performing a number of subsequent read operations using read potentials stepped to a higher and a lower read potential to a particular count of read operations.

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