Non-volatile memory cell having Si rich silicon nitride charge t

Details Non-volatile memory cell having Si rich silicon nitride charge t Non-volatile memory cell having Si rich silicon nitride charge t

1987-10-16

1989-09-26

Carroll, J.

357 2315, 357 45, 357 54, H01L 2978, H01L 2710, H01L 2934

Patent

active

048704709

ABSTRACT:
A non-volatile storage cell comprising a field effect transistor having source, gate, and drain electrodes. The gate electrode includes a gate stack having a dielectric layer, a charge storage structure comprising a layer of silicon-rich silicon nitride having sufficient excess silicon to provide appreciable charge storage enhancement, without providing appreciable charge conductance enhancement, as compared to stoichiometric silicon nitride, and a charge injection means. A control electrode is disposed on the gate stack for effecting charge transfer to and from the silicon-rich silicon nitride layer through the charge injection means. An array of these cells is formed by disposing the FETs within independently biased substrate portions. Thus the cells can be overwritten without an intervening erasure cycle.

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