Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2008-07-29
2008-07-29
Le, Vu A. (Department: 2824)
Static information storage and retrieval
Floating gate
Multiple values
C365S185150
Reexamination Certificate
active
07405969
ABSTRACT:
A non-volatile electrically erasable programmable read only memory (EEPROM) capable of storing two bit of information having a nonconducting charge trapping dielectric, such as silicon nitride, sandwiched between two silicon dioxide layers acting as electrical insulators is disclosed. The invention includes a method of programming, reading and erasing the two bit EEPROM device. The nonconducting dielectric layer functions as an electrical charge trapping medium. A conducting gate layer is placed over the upper silicon dioxide layer. A left and a right bit are stored in physically different areas of the charge trapping layer, near left and right regions of the memory cell, respectively. Each bit of the memory device is programmed in the conventional manner, using hot electron programming, by applying programming voltages to the gate and to either the left or the right region while the other region is grounded. Hot electrons are accelerated sufficiently to be injected into the region of the trapping dielectric layer near where the programming voltages were applied to. The device, however, is read in the opposite direction from which it was written, meaning voltages are applied to the gate and to either the right or the left region while the other region is grounded. Two bits are able to be programmed and read due to a combination of relatively low gate voltages with reading in the reverse direction. This greatly reduces the potential across the trapped charge region. This permits much shorter programming times by amplifying the effect of the charge trapped in the localized trapping region associated with each of the bits. In addition, both bits of the memory cell can be individually erased by applying suitable erase voltages to the gate and either left or right regions so as to cause electrons to be removed from the corresponding charge trapping region of the nitride layer.
REFERENCES:
patent: 3881180 (1975-04-01), Gosney, Jr.
patent: 3895360 (1975-07-01), Cricchi et al.
patent: 3952325 (1976-04-01), Beale et al.
patent: 4016588 (1977-04-01), Ohya et al.
patent: 4017888 (1977-04-01), Christie et al.
patent: 4145703 (1979-03-01), Blanchard et al.
patent: 4151021 (1979-04-01), McElroy
patent: 4173766 (1979-11-01), Hayes
patent: 4173791 (1979-11-01), Bell
patent: 4247861 (1981-01-01), Hsu et al.
patent: 4257832 (1981-03-01), Schwabe et al.
patent: 4281397 (1981-07-01), Neal et al.
patent: 4306353 (1981-12-01), Jacobs et al.
patent: 4342102 (1982-07-01), Puar
patent: 4342149 (1982-08-01), Jacobs et al.
patent: 4360900 (1982-11-01), Bate
patent: 4373248 (1983-02-01), McElroy
patent: 4380057 (1983-04-01), Kotecha et al.
patent: 6297143 (1983-05-01), Collins
patent: 4388705 (1983-06-01), Sheppard
patent: 4389705 (1983-06-01), Sheppard
patent: 4404747 (1983-09-01), Collins
patent: 4435786 (1984-03-01), Tickle
patent: 4448400 (1984-05-01), Harari
patent: 4471373 (1984-09-01), Shimizu et al.
patent: 4494016 (1985-01-01), Ransom et al.
patent: 4507673 (1985-03-01), Aoyama
patent: 4521796 (1985-06-01), Rajkanan et al.
patent: 4527257 (1985-07-01), Cricchi
patent: 4586163 (1986-04-01), Koike
patent: 4613956 (1986-09-01), Paterson et al.
patent: 4630085 (1986-12-01), Koyama
patent: 4663645 (1987-05-01), Komori et al.
patent: 4665426 (1987-05-01), Allen et al.
patent: 4667217 (1987-05-01), Janning
patent: 4672409 (1987-06-01), Takei et al.
patent: 4725984 (1988-02-01), Ip et al.
patent: 4733105 (1988-03-01), Shin et al.
patent: 4742491 (1988-05-01), Liang et al.
patent: 4758869 (1988-07-01), Eitan et al.
patent: 4760555 (1988-07-01), Gelsomini et al.
patent: 4761764 (1988-08-01), Watanabe
patent: 4769340 (1988-09-01), Chang et al.
patent: 4780424 (1988-10-01), Holler et al.
patent: 4839705 (1989-06-01), Tigelaar et al.
patent: 4847808 (1989-07-01), Kobatake
patent: 4857770 (1989-08-01), Partovi et al.
patent: 4870470 (1989-09-01), Bass, Jr. et al.
patent: 4888735 (1989-12-01), Lee et al.
patent: 4916671 (1990-04-01), Ichiguchi
patent: 4941028 (1990-07-01), Chen et al.
patent: 4961010 (1990-10-01), Davis
patent: 4992391 (1991-02-01), Wang
patent: 5021999 (1991-06-01), Kohda et al.
patent: 5027321 (1991-06-01), Park
patent: 5029063 (1991-07-01), Lingstaedt et al.
patent: 5042009 (1991-08-01), Kazerounian et al.
patent: 5075245 (1991-12-01), Woo et al.
patent: 5081371 (1992-01-01), Wong
patent: 5086325 (1992-02-01), Schumann et al.
patent: 5094968 (1992-03-01), Schumann et al.
patent: 5104819 (1992-04-01), Freiberger et al.
patent: 5117389 (1992-05-01), Yiu
patent: 5120672 (1992-06-01), Mitchell et al.
patent: 5142495 (1992-08-01), Canepa
patent: 5142496 (1992-08-01), Van Buskirk
patent: 5159570 (1992-10-01), Mitchell et al.
patent: 5168334 (1992-12-01), Mitchell et al.
patent: 5172338 (1992-12-01), Mehrotra et al.
patent: 5175120 (1992-12-01), Lee
patent: 5204835 (1993-04-01), Eitan
patent: 5214303 (1993-05-01), Aoki
patent: 5237213 (1993-08-01), Tanoi
patent: 5241497 (1993-08-01), Komarek
patent: 5260593 (1993-11-01), Lee
patent: 5268861 (1993-12-01), Hotta
patent: 5276646 (1994-01-01), Kim et al.
patent: 5280420 (1994-01-01), Rapp
patent: 5289412 (1994-02-01), Frary et al.
patent: 5293563 (1994-03-01), Ohta
patent: 5295092 (1994-03-01), Hotta et al.
patent: 5295108 (1994-03-01), Higa
patent: 5305262 (1994-04-01), Yoneda
patent: 5311049 (1994-05-01), Tsuruta
patent: 5315541 (1994-05-01), Harari et al.
patent: 5324675 (1994-06-01), Hayabuchi
patent: 5334555 (1994-08-01), Sugiyama et al.
patent: 5335198 (1994-08-01), Van Buskirk et al.
patent: 5338954 (1994-08-01), Shimoji
patent: 5345425 (1994-09-01), Shikatani
patent: 5349221 (1994-09-01), Shimoji
patent: 5350710 (1994-09-01), Hong et al.
patent: 5352620 (1994-10-01), Komori et al.
patent: 5357134 (1994-10-01), Shimoji
patent: 5359554 (1994-10-01), Odake et al.
patent: 5361343 (1994-11-01), Kosonocky et al.
patent: 5366915 (1994-11-01), Kodama
patent: 5375094 (1994-12-01), Naruke
patent: 5381374 (1995-01-01), Shiraishi et al.
patent: 5393701 (1995-02-01), Ko et al.
patent: 5394355 (1995-02-01), Uramoto et al.
patent: 5399891 (1995-03-01), Yiu et al.
patent: 5400286 (1995-03-01), Chu et al.
patent: 5402374 (1995-03-01), Tsuruta et al.
patent: 5412601 (1995-05-01), Sawada et al.
patent: 5414693 (1995-05-01), Ma et al.
patent: 5418176 (1995-05-01), Yang et al.
patent: 5418743 (1995-05-01), Tomioka et al.
patent: 5422844 (1995-06-01), Wolstenholme et al.
patent: 5424567 (1995-06-01), Chen
patent: 5424978 (1995-06-01), Wada et al.
patent: 5426605 (1995-06-01), Van Berkel et al.
patent: 5434825 (1995-07-01), Harari
patent: 5436478 (1995-07-01), Bergemont et al.
patent: 5436481 (1995-07-01), Egawa et al.
patent: 5440505 (1995-08-01), Fazio et al.
patent: 5450341 (1995-09-01), Sawada et al.
patent: 5450354 (1995-09-01), Sawada et al.
patent: 5455793 (1995-10-01), Amin et al.
patent: 5467308 (1995-11-01), Chang et al.
patent: 5477499 (1995-12-01), Van Buskirk et al.
patent: 5495440 (1996-02-01), Asakura
patent: 5496753 (1996-03-01), Sakurai et al.
patent: 5508968 (1996-04-01), Collins et al.
patent: 5518942 (1996-05-01), Shrivastava
patent: 5521870 (1996-05-01), Ishikawa
patent: 5523251 (1996-06-01), Hong
patent: 5523972 (1996-06-01), Rashid et al.
patent: 5530803 (1996-06-01), Chang et al.
patent: 5534804 (1996-07-01), Woo
patent: 5537358 (1996-07-01), Fong
patent: 5544116 (1996-08-01), Chao et al.
patent: 5553018 (1996-09-01), Wang et al.
patent: 5553030 (1996-09-01), Tedrow et al.
patent: 5557221 (1996-09-01), Taguchi et al.
patent: 5557570 (1996-09-01), Iwahashi
patent: 5559687 (1996-09-01), Nicollini et al.
patent: 5563823 (1996-10-01), Yiu et al.
patent: 5566125 (1996-10-01), Fazio et al.
patent: 5568085 (1996-10-01), Eitan et al.
patent: 5579199 (1996-11-01), Kawamura et al.
patent: 5581252 (1996-12-01), Thomas
patent: 5583808 (1996-12-01), Brahmbhatt
patent: 5590068 (1996-12-01), Bergemont
patent: 5590074 (1996-12-01), Akaogi et al.
patent: 5592417 (1997-01-01), Mirabel
patent: 5596527 (1997-01-01), Tomioka et al.
patent: 5599727 (1997-02-01), Hakozaki et al.
patent: 5600586 (1997-02-01), Lee et al.
patent: 5604804 (1997-02-01), Micali
patent:
EMPK & Shiloh, LLP
Le Vu A.
Saifun Semiconductors Ltd.
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