Non-volatile memory cell and level shifter

Details Non-volatile memory cell and level shifter Non-volatile memory cell and level shifter

1993-10-12

1996-05-07

Nguyen, Tan T.

Static information storage and retrieval

Floating gate

Particular biasing

36518516, 36518506, G11C 700

Patent

active

055153194

ABSTRACT:
A non-volatile memory cell 10 is disclosed herein. The cell is formed in a first semiconductor region 12 of a first conductivity type. A second semiconductor region 14 of a second conductivity type formed over the first semiconductor region 12. A third semiconductor region 16 of the first conductivity type formed over the second semiconductor region 14. In the preferred embodiment, the second and third regions 14 and 16 are well regions formed within the first region 12. Other regions such as epitaxially grown layers can also be used. First and second source/drain regions 18 and 20 are formed within the third semiconductor region 16. These second source/drain regions 18 and 20 are separated by a channel region 22. A floating gate 26 overlies at least a portion of the channel region 22 while a control gate 30 overlies the floating gate 26.

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