Non-volatile memory cell and fabrication method thereof

Details Non-volatile memory cell and fabrication method thereof Non-volatile memory cell and fabrication method thereof

2011-05-17

2011-05-17

Lebentritt, Michael S (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000, C257S004000, C257SE29170, C257SE21008, C257SE21010

Reexamination Certificate

active

07943917

ABSTRACT:
A non-volatile memory cell and the fabrication method thereof are provided. The non-volatile memory cell comprises a top electrode, a bottom electrode and an oxide layer disposed between the top electrode and the bottom electrode. The oxide layer comprises a relatively low oxygen content layer adjacent to the bottom electrode, a relatively high oxygen content layer adjacent to the top electrode, and a transition layer disposed between the relatively high and the relatively low oxygen content layers. The transition layer has an oxygen concentration within a range between those of the relatively high and the relatively low oxygen content layers.

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