Non-volatile memory cell

Details Non-volatile memory cell Non-volatile memory cell

1981-09-08

1983-08-23

Moffitt, James W.

Static information storage and retrieval

Read only systems

With override

365154, 365185, 365228, G11C 1140

Patent

active

044007990

ABSTRACT:
A nonvolatile memory cell employing a bistable RAM cell and an electrically erasable and electrically programmable (E.sup.2) floating gate memory device. The E.sup.2 cell is coupled between one of the input/output nodes of the RAM cell and a clear/recall line. The loads of the RAM cell are imbalanced, causing this cell to assume a predetermined state. If the E.sup.2 cell is in its erased state after a storage cycle, the potential on the store/recall line causes the RAM cell to assume its other stable state on recall.

REFERENCES:
patent: 4207615 (1980-06-01), Mar
patent: 4337522 (1982-06-01), Stewart
patent: 4363110 (1982-12-01), Kauter et al.
patent: 4366560 (1982-12-01), McDermott et al.

Affiliated with

Also associated with

Rating

Non-volatile memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile memory cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1950269