Non-volatile memory cell

Details Non-volatile memory cell Non-volatile memory cell

1989-04-27

1991-02-05

Hille, Rolf

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 55, 365185, H01L 2968, H01L 2906, G11C 1134

Patent

active

049909797

ABSTRACT:
The invention relates to an electrically erasable floating-gate memory cell (EEPROM) in which the Fowler-Nordheim tunnel effect is exploited for programming and erasing. In accordance with the invention, a trench adjacent to the side of the drain zone facing away from the channel zone and covered with a dielectric tunnel layer is provided in the semiconductor element, so that the floating-gate electrode extends into the trench in such a way that the tunnel current can flow horizontally to the semiconductor surface between the drain zone and the floating-gate electrode. This permits a reduction in the cell size and to higher integration densities. Preferably the floating gate electrodes of at least two cells extend into a single trench.

REFERENCES:
patent: 4435790 (1984-03-01), Tickle et al.
patent: 4471471 (1984-09-01), DiMaria
patent: 4622737 (1986-11-01), Ravaglia
patent: 4686558 (1987-08-01), Adam
patent: 4796228 (1989-01-01), Baglee
IBM Technical Disclosure Bulletin, vol. 24, No. 3, Aug. 1981, pp. 1331-1333.
IEEE Electron Device Letters, vol. EDL-8, No. 4, Apr. 1987, pp. 146-147.

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