Non-volatile memory array with simultaneous write and erase...

Details Non-volatile memory array with simultaneous write and erase... Non-volatile memory array with simultaneous write and erase...

2006-08-15

2006-08-15

Elms, Richard (Department: 2824)

Static information storage and retrieval

Floating gate

C365S185040, C365S220000

Reexamination Certificate

active

07092288

ABSTRACT:
A non-volatile transistor memory array has individual cells with a current injector and a non-volatile memory transistor. Injector current gives rise to charged particles that can be stored in the memory transistor by tunneling. When a row of the array is activated by a word line, the active row has current injectors ready to operate if program line voltages are appropriate to cause charge storage in a memory cell, while a cell in an adjacent row be erased by charge being driven from a memory transistor. A series of conductive plates are arranged over the word line, with each plate having a pair of oppositely extending tangs, one causing programming of a cell in a first row and another causing erasing of a cell in another row.

REFERENCES:
patent: 4334292 (1982-06-01), Kotecha
patent: 4375085 (1983-02-01), Grise et al.
patent: 4432075 (1984-02-01), Eitan
patent: 4434478 (1984-02-01), Cook et al.
patent: 4821236 (1989-04-01), Hayashi et al.
patent: 4890259 (1989-12-01), Simko
patent: 5126967 (1992-06-01), Simko
patent: 5949716 (1999-09-01), Wong et al.
patent: 5959887 (1999-09-01), Takashina et al.
patent: 5990512 (1999-11-01), Diorio et al.
patent: 6026022 (2000-02-01), Yamashita et al.
patent: 6125053 (2000-09-01), Diorio et al.
patent: 6212105 (2001-04-01), Kowalski
patent: 6345000 (2002-02-01), Wong et al.
patent: 2002/0014642 (2002-02-01), Gerber et al.
patent: 2002/0149986 (2002-10-01), Wong
B. Eitan et al. (School of Applied Science and Technology, The Hebrew University of Jerusalem, Jerusalem, Israel),Impact Ionization at Very Low Voltages in Silicon, J. Appl. Phys. 53(2), Feb. 1982, pp. 1244-1247.

Affiliated with

Also associated with

Rating

Non-volatile memory array with simultaneous write and erase... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile memory array with simultaneous write and erase..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile memory array with simultaneous write and erase... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3675732