Non-volatile memory array using single poly EEPROM in standard C

Details Non-volatile memory array using single poly EEPROM in standard C Non-volatile memory array using single poly EEPROM in standard C

1997-03-27

1999-09-28

Zarabian, A.

Static information storage and retrieval

Floating gate

Particular connection

365226, G11C 1134

Patent

active

059598859

ABSTRACT:
Non-volatile storage elements are provided in an array on an integrated circuit, where the non-volatile storage elements are low voltage CMOS devices and hence compatible in a manufacturing sense with other similar transistors on an integrated circuit. The non-volatile storage elements are either EEPROM floating gate transistor cells, or other EEPROM cells using standard low voltage CMOS devices.

REFERENCES:
patent: 4980859 (1990-12-01), Guterman
patent: 5523971 (1996-06-01), Rao
patent: 5579524 (1996-11-01), Kikinis
patent: 5581455 (1996-12-01), Rossi
patent: 5612249 (1997-03-01), Sun
patent: 5646885 (1997-07-01), Matsuo

Affiliated with

Also associated with

Rating

Non-volatile memory array using single poly EEPROM in standard C does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile memory array using single poly EEPROM in standard C, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile memory array using single poly EEPROM in standard C will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-711127