Non-volatile memory and write method of the same

Details Non-volatile memory and write method of the same Non-volatile memory and write method of the same

2007-05-01

2007-05-01

Le, Thong Q. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S226000, C365S189040

Reexamination Certificate

active

11062662

ABSTRACT:
A non-volatile memory in which a plurality of memory cells connected to a same word line are entirely written with data. Source lines SL separated from each other in column units is arranged on each memory cell of a memory cell array. When writing data, one of either a first or a second source voltage is applied to each source line in accordance with data that is to be written. After a first control voltage of negative voltage is applied, a second control voltage of high voltage is applied to the word line with the voltage of each source line SL in a maintained state. Therefore, each memory cell is erased or programmed in accordance with the voltage applied to the respective source line.

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