Non-volatile memory and the fabrication method

Details Non-volatile memory and the fabrication method Non-volatile memory and the fabrication method

2007-06-19

2007-06-19

Le, Thao X. (Department: 2814)

Semiconductor device manufacturing: process

Having selenium or tellurium elemental semiconductor component

C438S103000, C257SE31029

Reexamination Certificate

active

10980309

ABSTRACT:
A non-volatile memory comprising: a first substrate (100) and a second substrate (110), the first substrate (100) having a plurality of switching elements (4) arranged in matrix, and a plurality of first electrodes (18) connected to the switching element (4), the second substrate (110) having a conductive film (32), and a recording layer (34) whose resistance value changes by application of an electric pulse, wherein the plurality of first electrodes (18) are integrally covered by the recording layer (34), the recording layer (34) thereby being held between the plurality of first electrodes (18) and the conductive film (32); the first substrate (100) further comprising a second electrode (22), the second electrode (22) being electrically connected to the conductive film (32), the voltage of which is maintained at a set level while applying current to the recording layer (34).This non-volatile memory achieves high integration at low cost.

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