Non-volatile memory and semiconductor device

Details Non-volatile memory and semiconductor device Non-volatile memory and semiconductor device

2009-03-19

2010-12-21

Nguyen, Viet Q (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185240, C365S185030, C365S185220, C365S189160, C365S189070

Reexamination Certificate

active

07855919

ABSTRACT:
There is provided a non-volatile memory which enables high accuracy threshold control in a writing operation. In the present invention, a drain voltage and a drain current of a memory transistor are controlled to carry out a writing operation of a hot electron injection system, which is wherein a charge injection speed does not depend on a threshold voltage. FIGS.1A and1B are views of a circuit structure for controlling the writing. In FIGS.1A and1B, an output of an operational amplifier103is connected to a control gate of a memory transistor101, a constant current source102is connected to a drain electrode, and a source electrode is grounded. The constant current source102and a voltage Vpgm are respectively connected to two input terminals of the operational amplifier103.

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