Non-volatile memory and operating method thereof

Details Non-volatile memory and operating method thereof Non-volatile memory and operating method thereof

2006-04-12

2008-11-11

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185170, C365S185260, C365S185290

Reexamination Certificate

active

07450418

ABSTRACT:
An operating method of a non-volatile memory is provided. The non-volatile memory includes plural memory cells. Each memory cell includes a charge storage structure, a gate, and a source and a drain disposed in the well on the both sides of the gate. During an erasing operation, a first voltage is applied to the source of the selected memory cell, a second voltage is applied to the gate of each selected memory cell, and a third voltage is applied to the well; and the drain of the selected memory cell is floated, so that the selected memory cell is erased. In the meantime, the fourth voltage is applied to the drain of each unselected memory cell, the fifth voltage is applied to the gate of the unselected memory cell, and the source of the unselected memory cell is floated to prevent the unselected memory cell from being erased.

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