Static information storage and retrieval – Powering
Reexamination Certificate
2002-09-24
2008-10-28
Le, Thong Q (Department: 2827)
Static information storage and retrieval
Powering
C365S149000, C365S196000
Reexamination Certificate
active
07443757
ABSTRACT:
A memory device and a method thereof allow sensing a plurality of memory cells in parallel while minimizing errors caused by bit-line to bit-line crosstalk. Essentially, the bit line voltages of the plurality of bit line coupled to the plurality of memory cells are controlled such that the voltage difference between each adjacent pair of lines is substantially independent of time while their conduction currents are being sensed. When this condition is imposed, all the alternate currents due to the various bit line capacitance drop out since they all depend on a time varying voltage difference. In another aspect, sensing the memory cell's conduction current is effected by noting its rate of discharging a dedicated capacitor provided in the sense amplifier.
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Cernea Raul-Adrian
Li Yan
Davis , Wright, Tremaine, LLP
Le Thong Q
Sandisk Corporation
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