Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2005-10-18
2005-10-18
Phung, Anh (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S185170, C365S185220
Reexamination Certificate
active
06956770
ABSTRACT:
When programming a contiguous page of memory storage units, every time a memory storage unit has reached its targeted state and is program-inhibited or locked out from further programming, it creates a perturbation on an adjacent memory storage unit still under programming. The present invention provides as part of a programming circuit and method in which an offset to the perturbation is added to the adjacent memory storage unit still under programming. The offset is added as voltage offset to a bit line of a storage unit under programming. The voltage offset is a predetermined function of whether none or one or both of its neighbors are in a mode that creates perturbation, such as in a program inhibit mode. In this way, an error inherent in programming in parallel high-density memory storage units is eliminated or minimized.
REFERENCES:
patent: 5172338 (1992-12-01), Mehrotra et al.
patent: 5570315 (1996-10-01), Tanaka et al.
patent: 5595924 (1997-01-01), Yuan et al.
patent: 5768192 (1998-06-01), Eitan
patent: 5774397 (1998-06-01), Endoh et al.
patent: 5903495 (1999-05-01), Takeuchi et al.
patent: 6011287 (2000-01-01), Itoh et al.
patent: 6011725 (2000-01-01), Eitan
patent: 6046935 (2000-04-01), Takeuchi et al.
patent: 6191975 (2001-02-01), Shimizu et al.
patent: 6504757 (2003-01-01), Hollmer et al.
patent: 6747899 (2004-06-01), Hsia et al.
patent: 6807103 (2004-10-01), Cavaleri et al.
patent: 2002/0126532 (2002-09-01), Matsunaga et al.
EPO/ISA, “Notification of Transmittal of the International Search Report and the Written Opinion of the International Searching Authority, or the Declaration”, mailed in corresponding PCT/US2004/030420 on Jan. 28, 2005, 12 pages.
Cernea Raul-Adrian
Khalid Shahzad
Li Yan
Mofidi Mehrdad
Le Toan
Parsons Hsue & de Runtz LLP
Phung Anh
SanDisk Corporation
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