Non-volatile memory and method of operation

Details Non-volatile memory and method of operation Non-volatile memory and method of operation

2005-12-20

2005-12-20

Auduong, Gene N. (Department: 2818)

Horology: time measuring systems or devices

Regulating means

For setting

C365S185290, C365S185330

Reexamination Certificate

active

06977869

ABSTRACT:
A method of programming and erasing an electrically erasable programmable read-only memory (EEPROM)device includes performing a band-to-band tunneling induced hot-electrons program and performing a Fowler-Nordheim tunneling erase. The EEPEOM device includes a P-type transistor, an N-type transistor, and a double gate P-type transistor. A source of the P-type transistor and the N-type transistor are respectively electrically connected to a program bit-line and an erase bit-line. A drain of the double gate P-type transistor is electrically connected to a drain of the P-type transistor and a drain of the N-type transistor.

REFERENCES:
patent: 4794562 (1988-12-01), Kato et al.
patent: 6266278 (2001-07-01), Harari et al.
patent: 6344993 (2002-02-01), Harari et al.
patent: 6455887 (2002-09-01), Lin et al.

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