Non-volatile memory and control with improved partial page...

Details Non-volatile memory and control with improved partial page... Non-volatile memory and control with improved partial page...

2006-06-06

2006-06-06

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180, C365S185030

Reexamination Certificate

active

07057939

ABSTRACT:
In a non-volatile memory programming scheme where the memory cells are programmed in two or more sequential programming passes, when there is insufficient host data to program at least some of the memory cells during the second pass, some of the memory cells may be programmed to the wrong threshold voltage. This can be prevented by modifying the programming scheme so that this does not occur. In one implementation, this is accomplished by choosing a code scheme, which does not cause the memory cells to be programmed to the wrong threshold voltage during the second programming pass, or by programming the memory cells in accordance with substitute data that would not cause the cells to be programmed to an erroneous state.

REFERENCES:
patent: 4357685 (1982-11-01), Daniele et al.
patent: 5070032 (1991-12-01), Yuan et al.
patent: 5095344 (1992-03-01), Harari
patent: 5172338 (1992-12-01), Mehrotra et al.
patent: 5313421 (1994-05-01), Guterman et al.
patent: 5315541 (1994-05-01), Harari et al.
patent: 5343063 (1994-08-01), Yuan et al.
patent: 5418752 (1995-05-01), Harari et al.
patent: 5570315 (1996-10-01), Tanaka et al.
patent: 5595924 (1997-01-01), Yuan et al.
patent: 5661053 (1997-08-01), Yuan
patent: 5768192 (1998-06-01), Eitan
patent: 5774397 (1998-06-01), Endoh et al.
patent: 5867429 (1999-02-01), Chen et al.
patent: 5903495 (1999-05-01), Takeuchi et al.
patent: 6011725 (2000-01-01), Eitan
patent: 6046935 (2000-04-01), Takeuchi et al.
patent: 6222762 (2001-04-01), Guterman et al.
patent: 6288935 (2001-09-01), Shibata et al.
patent: 6522580 (2003-02-01), Chen et al.
patent: 6657891 (2003-12-01), Shibata et al.
patent: 6760257 (2004-07-01), Huang et al.
patent: 6768681 (2004-07-01), Kim
patent: 6781877 (2004-08-01), Cernea et al.
patent: 6845039 (2005-01-01), Chen et al.
patent: 2004/0047183 (2004-03-01), Tanaka et al.
patent: 2004/0060031 (2004-03-01), Cernea
Eitan et al., “NROM: A Novel Localized Trapping, 2-Bit Nonvolatile Memory Cell,” IEEE Electron Device Letters, vol. 21, No. 11, Nov. 2000, pp. 543-545.
Notification of Transmittal of the International Search Report and the Written Opinion of the International Searching Authority, or the Declaration, in corresponding PCT/US2005/013018, dated Apr. 8, 2005, 12 pp.
Takeuchi et al., “A Multi-Page Cell Architecture for High-Speed Programming Multi-Level NAND Flash Memories,” 1997 Symposium on VLSI Circuits Digest of Technical Papers, Jun., 1997, pp. 67-68.

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