Non-volatile memory

Static information storage and retrieval – Powering

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Details

36518909, G11C 1300

Patent

active

058386262

ABSTRACT:
A non-volatile memory includes a plurality of cell blocks, each including a plurality of non-volatile memory cells which are electrically rewritable. Each non-volatile memory cell has a source, a drain, a control gate and a floating gate. The non-volatile memory is further provided with a bias controller which can concurrently apply a first bias voltage to the source and a second bias voltage to the drain of each non-volatile memory cell In call blocks. Preferably, the bias controller applies the first bias voltage to both the source and the drain of each non-volatile memory cell.

REFERENCES:
Wada, Takeshi "Development Stage and Application of Flash Memory in Hitachi", technical paper delivered at a seminar in Japan on Mar. 3, 1992.

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