Non-volatile magnetic memory element with graded layer

Details Non-volatile magnetic memory element with graded layer Non-volatile magnetic memory element with graded layer

2007-07-12

2011-11-22

Phung, Anh (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257SE29323, C257SE21665, C365S158000, C365S171000

Reexamination Certificate

active

08063459

ABSTRACT:
A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound.

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