Non-volatile flash memory device having dual-bit floating gate

Details Non-volatile flash memory device having dual-bit floating gate Non-volatile flash memory device having dual-bit floating gate

2007-02-13

2007-02-13

Phung, Anh (Department: 2824)

Static information storage and retrieval

Floating gate

Multiple values

C365S185240, C365S185330

Reexamination Certificate

active

11023425

ABSTRACT:
A non-volatile memory device having a unit cell, the unit cell including a transistor, word lines, a first bit line and a second bit line. The transistor includes a gate oxide layer on a substrate, polysilicon gate, sidewall floating gates, block oxide layers formed between the polysilicon gate and sidewall floating gates, the block oxide layers also comprising first block oxide layer and second block oxide layer, and source and drain regions. The word lines are vertically placed on the substrate and connected to the polysilicon gate. The first bit line is orthogonally placed to the word lines and connected to the source region and a second bit line is orthogonally placed to the word lines and connected to the drain region.

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