Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2004-12-01
2010-11-09
Fahmy, Wael M (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257SE21255, C438S099000
Reexamination Certificate
active
07829884
ABSTRACT:
A non-volatile ferroelectric memory device is proposed which comprises a combination of an organic ferroelectric polymer with an organic ambipolar semiconductor. The devices of the present invention are compatible with—and fully exploit the benefits of polymers, i.e. solution processing, low-cost, low temperature layer deposition and compatibility with flexible substrates.
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G.H. Gelinck, “High-performance all-polymer integrated circuits”, Applied Physics Letters, vol. 77, No. 10, Sep. 4, 2000, pp. 1487-1489.
F.J. Touwslager et al, “I-Line lithography of poly-(3,4-ethylenedioxythiophene) electrodes and application in all-polymer integrated circuits”, Applied Physics Letters, vol. 81, No. 24, Dec. 9, 2002, pp. 4556-4558.
De Leeuw Dagobert Michel
Gelinck Gerwin Hermanus
Marsman Albert W.
Touwslager Fredericus Johannes
Fahmy Wael M
Ingham John C
Koninklijke Philips Electronics , N.V.
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