Static information storage and retrieval – Floating gate – Multiple values
Patent
1999-02-03
1999-10-19
Yoo, Do Hyun
Static information storage and retrieval
Floating gate
Multiple values
36518519, 36518907, G11C 700
Patent
active
059699876
ABSTRACT:
Methods and apparatus for achieving analog storage in a non-volatile memory array. The array consists of memory cells that utilize Fowler-Nordheim tunneling for erasure and hot electron injection for programming. Writing into a cell is performed by an initial erasure followed by a controlled sequence of program operations during which the cell is programmed in small increments. The stored voltage is read after each program step and when the voltage read back from the cell is equal or just beyond the desired analog level, the sequence of program steps is terminated. The read condition for the cell applies a positive voltage to the drain or common line and a positive voltage to the control gate. The source is connected through a load device to a negative (ground) supply. The output from the cell is the actual voltage that exists at the source node. There is no current sensing or comparison with a reference voltage to determine the output state. A digital number can be represented by assigning a specific analog level to a digital number. The range of digital numbers that can be represented is determined by the analog voltage range divided by the accuracy to which the voltage may be stored and reliably retrieved. Other aspects and features of the invention are disclosed.
REFERENCES:
patent: 4627027 (1986-12-01), Rai et al.
patent: 4698787 (1987-10-01), Mukherjee et al.
patent: 4890259 (1989-12-01), Simko
patent: 4989179 (1991-01-01), Simko
patent: 5021999 (1991-06-01), Kohda et al.
patent: 5029130 (1991-07-01), Yeh
patent: 5045488 (1991-09-01), Yeh
patent: 5067108 (1991-11-01), Jenq
patent: 5164915 (1992-11-01), Blyth
patent: 5202850 (1993-04-01), Jenq
patent: 5218569 (1993-06-01), Banks
patent: 5220531 (1993-06-01), Blyth et al.
patent: 5241494 (1993-08-01), Blyth et al.
patent: 5242848 (1993-09-01), Yeh
patent: 5278087 (1994-01-01), Jenq
patent: 5289411 (1994-02-01), Jeng et al.
patent: 5294819 (1994-03-01), Simko
patent: 5537358 (1996-07-01), Fong
patent: 5583812 (1996-12-01), Harari
patent: 5615153 (1997-03-01), Yiu et al.
Blyth Trevor
Simko Richard T.
Information Storage Devices, Inc.
Yoo Do Hyun
LandOfFree
Non-volatile electrically alterable semiconductor memory for ana does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Non-volatile electrically alterable semiconductor memory for ana, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile electrically alterable semiconductor memory for ana will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2064671