Static information storage and retrieval – Magnetic bubbles – Guide structure
Patent
1986-04-23
1987-05-12
Edlow, Martin H.
Static information storage and retrieval
Magnetic bubbles
Guide structure
357 236, 365149, 365184, 365185, H01U 2978
Patent
active
046654178
ABSTRACT:
A non-volatile dynamic memory cell in which the non-volatile element has two different areas for electron injection, such that direct overwriting of previously stored non-volatile data is permitted without an intervening erase cycle. The non-volatile storage element is a floating gate electrode which has dual control gates disposed thereon. Each control gate includes a layer of dual electron injector structure (DEIS) and a polysilicon gate. When writing a "0" from the volatile storage capacitor to the floating gate, one of the programming gates removes charge from the floating gate. To write a "1", the other programming gate injects charge into the floating gate. The above charge transfer does not take place if the previously stored logic gate and the logic state to be written in are identical.
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Chadurjian Mark F.
Edlow Martin H.
International Business Machines - Corporation
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