Non-volatile dynamic random access memory

Details Non-volatile dynamic random access memory Non-volatile dynamic random access memory

1995-06-02

1997-04-08

Nelms, David C.

Static information storage and retrieval

Powering

Data preservation

365145, 365194, 36523001, 365236, G11C 700

Patent

active

056194706

ABSTRACT:
A memory device including a memory for storing data having volatile and non-volatile capability; an access circuit for reading/writing the data stored in a volatile state at an address in said memory in accordance with an access command indicating the address; a transfer circuit for transferring the data stored in said memory from the volatile state into a non-volatile state; and a recall circuit for recalling the data stored in said memory in the non-volatile state into the volatile state, wherein said recall circuit selectively performs a recall operation for a section of said memory which includes the address before said access circuit performs a read/write operation for the data when the data at the address is stored in the non-volatile state.

REFERENCES:
patent: 4809225 (1989-02-01), Dimmler et al.
patent: 5381379 (1995-01-01), Fukumoto
Fukumoto et al., "A 256K-bit non-volatile PSRAM with page recall and chip store" 1991 Sym. VLSI Circuit Dig. Tech. Papers (1991) pp. 91-92.
Fukumoto et al., "Development of 256Kbit non-volatile DRAM(NV-DRAM) operating as a pseudo-SRAM" Sharp Technical Journal (1991) No. 49, pp. 45-49.
Evans et al., "An experimental 512-bit nonvolatile memory with ferroelectric storage cell" IEEE Journal of Solid-State Circuits (1988) 23(5):233-237.
Moazzami et al., "A ferrolectric DRAM cell for high-density NVRAM's" IEEE Electron Device Letters (1990) 11(10):238-240.

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