Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2005-10-11
2005-10-11
Yoha, Connie C. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185010, C365S185070, C365S154000, C365S149000, C365S145000
Reexamination Certificate
active
06954377
ABSTRACT:
In accordance with the present invention, a memory cell includes a pair of non-volatile devices and a pair of DRAM cells each associated with a different one of the non-volatile devices. Each DRAM cell further includes an MOS transistor a capacitor. The DRAM cells and their associated non-volatile devices operate differentially and when programmed store and supply complementary data. The non-volatile devices are erased prior to being programmed. Programming of the non-volatile devices may be done via hot-electron injection or Fowler-Nordheim tunneling. When a power failure occurs, the data stored in the DRAM are loaded in the non-volatile devices. After the power is restored, the data stored in the non-volatile devices are restored in the DRAM cells. The differential reading and wring of data reduces over-erase of the non-volatile devices.
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Choi Kyu Hyun
Li Sheau-suey
O2IC, Inc.
Yoha Connie C.
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