Non-volatile, bidirectional, electrically programmable integrate

Details Non-volatile, bidirectional, electrically programmable integrate Non-volatile, bidirectional, electrically programmable integrate

1995-12-13

1997-04-01

Nelms, David C.

Static information storage and retrieval

Floating gate

Particular connection

3651851, 257315, G11C 1134

Patent

active

056173520

ABSTRACT:
A non-volatile, bidirectional electrically programmable integrated memory ement is describe which includes a dielectric structure supported by a substrate and a programming terminal supported by the dielectric structure. The programming terminal includes: (1) a first polysilicon structure; a second polysilicon structure; and an electrically conductive first interconnect which electrically connects the first polysilicon structure to the second polysilicon structure; (2) a floating gate structure supported by the dielectric structure which includes: (a) a third polysilicon structure which overlies and is separated from a section of the first polysilicon structure by the dielectric structure; (b) a fourth polysilicon structure which is overlain and separated from a section of the second polysilicon structure by the dielectric structure; and (c) an electrically conductive second interconnect which electrically couples the third polysilicon structure to the fourth polysilicon structure. The memory element also includes a capacitor electrically connected to the second interconnect.

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patent: 5253196 (1993-10-01), Shimabukuro et al.
patent: 5481492 (1996-01-01), Shoemaker

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