Non-volatile amorphous semiconductor memory device utilizing a f

Details Non-volatile amorphous semiconductor memory device utilizing a f Non-volatile amorphous semiconductor memory device utilizing a f

1985-06-24

1987-08-04

Larkins, William D.

357 2, 357 57, 357 63, H01L 4500

Patent

active

046849726

ABSTRACT:
A semiconductor device comprising superimposed layers of p- and n-doped semiconducting material (e.g. silicon) and electrical contact means for applying an electrical potential across the superimposed layers is characterized in that the p- and n-doped layers are both of amorphous semiconducting mateial (e.g. silicon) and one of said layers is much more heavily doped than the other. Suitably the less heavily doped layer has a thickness which is not greater than 2 .mu.m and the dopant concentration in the more heavily doped layer is one hundred or more times the dopant concentration of the less heavily doped layer. Preferably a third or quasi-intrinsic layer or substantially undoped amorphous semiconducting material (e.g. silicon) or electrically insulating material is applied to one of the doped layers between that layer and its electrical contact means. The device can be used as an electrically-programmable non-volatile semiconductor memory device.

REFERENCES:
patent: 3571670 (1971-03-01), Ovshinsky
patent: 3571672 (1971-03-01), Ovshinsky
patent: 3571873 (1971-03-01), Ovshinsky
patent: 3740620 (1973-06-01), Agusta et al.
patent: 3758797 (1973-09-01), Peterson et al.
patent: 3761896 (1973-09-01), Davidson
patent: 3796931 (1974-03-01), Maute
patent: 4064521 (1977-12-01), Carlson
patent: 4177474 (1979-12-01), Ovshinsky
patent: 4203123 (1980-05-01), Shanks
patent: 4226643 (1980-10-01), Carlson
patent: 4455495 (1984-06-01), Masuhara et al.
patent: 4464415 (1984-08-01), Yamazaki
Akiba et al., "Asymmetric Switching and Memory Characteristics in Amorphous Semiconductor", Japan J. Appl. Phys., vol. 13, (1974), No. 5, pp. 915-916.
Switching and Memory in ZnSe--Ge Heterojunctions, H. J. Hovel, Applied Physics Letters, vol. 17, No. 4, pp. 141-143, Aug. 15, 1970.
Switching in Hydrogenated Amorphous Silicon, Gabrial and Adler, Journal of Non--Crystalline Solids 48, (1982), 297-305.
Switching and Memory Characteristics of ZnSe--Ge Heterojunctions, Hovel and Urgell, Journal of Applied Physics, vol. 42, No. 12, Nov. 1971.
Japanese Journal of Applied Physics, vol. 13, No. 5, 1974, pp. 915-916, Akiba.
Journal of Applied Physics, vol. 46, No. 5, May 1975, American Institute of Physics, S. Purkiss et al.

Affiliated with

Also associated with

Rating

Non-volatile amorphous semiconductor memory device utilizing a f does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile amorphous semiconductor memory device utilizing a f, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile amorphous semiconductor memory device utilizing a f will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-886570