Non-uniform thickness or bandgap superlattice betweeen cladding

Details Non-uniform thickness or bandgap superlattice betweeen cladding Non-uniform thickness or bandgap superlattice betweeen cladding

1997-08-08

1998-06-09

Whitehead, Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 15, 257 14, 257 85, 257185, 257432, H01L 2906, H01L 31075, H01L 31153, H01L 310232

Patent

active

057638977

ABSTRACT:
In the structure of the device of the invention, a supper-lattice buffer layer is formed between the undoped layer and doped layers. This super-lattice buffer layer serves as a carrier-piling up layer in place of the undoped layer in the conventional device. Thus, the amounts of the piled-up carriers in the undoped layer can be greatly reduced and hence no band filling effect occurs in the undoped layer. Consequently, an optical device having a flat frequency characteristic can be produced without losing its modulating characteristic.

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"High-Speed InGaAs/InAlAs Multiple-Quantum-Well Optical Modulator", I. Kotaka et al. Denshi Joho Tsushini Gakkai Ronbanshi, vol.74-C-I, No. 11, Nov. 1991, pp. 414-420 and Electronics and Communications in Japan, Part II: Electronics 75 (1992) Jun., No. 6, pp. 24-31.

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