Non-uniform switching based non-volatile magnetic based memory

Details Non-uniform switching based non-volatile magnetic based memory Non-uniform switching based non-volatile magnetic based memory

2007-02-12

2011-12-27

Phung, Anh (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257SE21665, C365S158000, C365S171000

Reexamination Certificate

active

08084835

ABSTRACT:
A non-uniform switching based non-volatile magnetic memory element includes a fixed layer, a barrier layer formed on top of the fixed layer, a first free layer formed on top of the barrier layer, a non-uniform switching layer (NSL) formed on top of the first free layer, and a second free layer formed on top of the non-uniform switching layer. Switching current is applied, in a direction that is substantially perpendicular to the fixed layer, barrier layer, first free layer, non-uniform switching layer and the second free layer causing switching between states of the first free layer, second free layer and non-uniform switching layer with substantially reduced switching current.

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Counterpart for China Application, 200880011839.8, CPEL0952038P.
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Counterpart for Korean A

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