Semiconductor device manufacturing: process – Gettering of substrate – By implanting or irradiating
Reexamination Certificate
2007-06-14
2009-11-17
Tran, Thien F (Department: 2895)
Semiconductor device manufacturing: process
Gettering of substrate
By implanting or irradiating
C438S474000, C438S475000, C438S476000
Reexamination Certificate
active
07618879
ABSTRACT:
This invention is directed to a process for heat-treating a single crystal silicon segment to influence the profile of minority carrier recombination centers in the segment. The segment is subjected to a heat-treatment to form crystal lattice vacancies, the vacancies being formed in the bulk of the silicon. The segment is then cooled at a rate which allows some, but not all, of the crystal lattice vacancies to diffuse to the front surface to produce a segment having the desired vacancy concentration profile. Platinum atoms are then in-diffused into the silicon matrix such that the resulting platinum concentration profile is substantially related to the concentration profile of the crystal lattice vacancies.
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Armstrong Teasdale LLP
MEMC Electronics Materials, Inc.
Tran Thien F
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