Non-thermal process for forming porous low dielectric...

Coating processes – Direct application of electrical – magnetic – wave – or... – Pretreatment of substrate or post-treatment of coated substrate

Reexamination Certificate

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C427S554000, C427S555000, C427S487000, C427S489000, C427S532000, C427S535000, C427S543000, C427S551000, C427S255370, C427S255393, C438S790000, C438S789000

Reexamination Certificate

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10295568

ABSTRACT:
Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In certain embodiments of the invention, there is provided a low-temperature process to remove at least a portion of at least one pore-forming phase within a multiphasic film thereby forming a porous film. The pore-forming phase may be removed via exposure to at least one energy source, preferably an ultraviolet light source, in a non-oxidizing atmosphere.

REFERENCES:
patent: 5454915 (1995-10-01), Shor et al.
patent: 5593737 (1997-01-01), Meinzer et al.
patent: 5895263 (1999-04-01), Carter et al.
patent: 5935646 (1999-08-01), Raman et al.
patent: 6042994 (2000-03-01), Yang et al.
patent: 6054206 (2000-04-01), Mountsier
patent: 6231989 (2001-05-01), Chung et al.
patent: 6238751 (2001-05-01), Mountsier
patent: 6284050 (2001-09-01), Shi et al.
patent: 6312793 (2001-11-01), Grill et al.
patent: 6426235 (2002-07-01), Matsushita et al.
patent: 6458720 (2002-10-01), Aoi
patent: 6472076 (2002-10-01), Hacker
patent: 6475930 (2002-11-01), Junker et al.
patent: 6596467 (2003-07-01), Gallagher et al.
patent: 6596834 (2003-07-01), Zhong
patent: 6639015 (2003-10-01), Nakashima et al.
patent: 6958480 (2005-10-01), Iyer et al.
patent: 6960327 (2005-11-01), Navrotsky et al.
patent: 7098149 (2006-08-01), Lukas et al.
patent: 7132171 (2006-11-01), Ohdaira et al.
patent: 7166531 (2007-01-01), van den Hoek et al.
patent: 7169715 (2007-01-01), Ott et al.
patent: 7208389 (2007-04-01), Tipton et al.
patent: 7241704 (2007-07-01), Wu et al.
patent: 2001/0018129 (2001-08-01), Shiota et al.
patent: 2001/0038919 (2001-11-01), Berry, III et al.
patent: 2002/0102413 (2002-08-01), Han et al.
patent: 2002/0106500 (2002-08-01), Albano et al.
patent: 2002/0132496 (2002-09-01), Ball et al.
patent: 2003/0003288 (2003-01-01), Nakata et al.
patent: 2003/0032300 (2003-02-01), Waldfried et al.
patent: 2003/0054115 (2003-03-01), Albano et al.
patent: 2003/0087042 (2003-05-01), Murakami et al.
patent: 2003/0157248 (2003-08-01), Watkins et al.
patent: 2004/0018319 (2004-01-01), Waldried et al.
patent: 2004/0058090 (2004-03-01), Waldfried et al.
patent: 2004/0109950 (2004-06-01), Adams et al.
patent: 2005/0048795 (2005-03-01), Ko et al.
patent: 2005/0255710 (2005-11-01), You et al.
patent: 2006/0005608 (2006-01-01), Kitzhoffer et al.
patent: 2006/0024976 (2006-02-01), Waldfried et al.
patent: 2006/0078676 (2006-04-01), Lukas et al.
patent: 2006/0183055 (2006-08-01), O'Neil et al.
patent: 2007/0173071 (2007-07-01), Afzali-Ardakani et al.
patent: 2007/0299239 (2007-12-01), Weigel et al.
patent: 1037275 (2000-09-01), None
patent: 1 108 763 (2001-06-01), None
patent: 1 197 998 (2002-04-01), None
patent: 1 482 550 (2004-12-01), None
patent: 540118 (1990-03-01), None
patent: WO 0002241 (2000-01-01), None
patent: WO 0207191 (2002-01-01), None
patent: WO 02/11204 (2002-02-01), None
patent: WO 02065534 (2002-08-01), None
patent: WO 2004/083495 (2004-09-01), None
patent: WO 2005/019303 (2005-03-01), None
U.S. Appl. No. 60/267,921, filed Feb. 12, 2001, Ball et al.
A. Hozumi, et al., Low-Temperature Elimination of Organic Components from Mesostructured Organic—Inorganic Composite Films Using Vacuum Ultraviolet Light, Chem., Mater., 2000, 12, 3842-3847, no month.
M. Ouyang, et al., Conversion of Some Siloxane Polymers to Silicon Oxide by UV/Ozone Photochemical Processes, Chem Mater., 2000, 12, 1591-1596, no month, but published on Web May 2000.
A. Hozumi, et al., Micropatterned Silica Films with Ordered Nanopores Fabricated through Photocalcination, National Institute of Advanced Industrial Science & Technology, vol. 1, No. 8, Aug. 2001.
T. Clark, Jr., et al., A New Application of UV—Ozone Treatment in the Preparation of Substrate-Supported,Mesoporous Thin Films, Chem Mater., 2000, 12, 3879-3884, no month, but published on Web Dec. 2000.
Q. Han, et al., “Ultra Low-k Porous Silicon Dioxide Films from a Plasma Process,” IEEE (2001), pp. 171-173, no month.
C. Waldfried, et al., “Single Water RapidCuring™ of Porous Low-k Materials,” IEEE (2002), pp. 226-228, no month.
Dixit, Girish, et al., “Film Properties and Integration Performance of a Nano-Porous Carbon Doped Oxide”, Applied Materials, Inc, Santa Clara, California, USA, International Interconnect Technology Conference, Jun. 2004.
Hozumi, A., et al., “Photocalcination of Mesoporous Silica Films Using Vaccum Ultraviolet Light”,Advanced Materials, Wiley VCH, Weinheim, DE, vol. 12, No. 13, Jul. 5, 2000, pp. 985-987.
Grill, A. et al., “Multiphase Low-K Materials Prepared by PECVD”, Electrochemical Society Proceedings, vol. 2000-5, pp. 55-62.

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