Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1996-10-30
1998-07-21
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 16, 257 22, 257438, 257442, H01L 2714, H01L 2904, H01L 2915
Patent
active
057838380
ABSTRACT:
Described is a semiconductor photo detector comprising, between two electrodes, at least one of said electrodes being a transparent electrode, an optical absorption layer which is composed of a non-single crystalline material, absorbs light and generates photo carriers and a carrier multiplication layer which is composed of a non-single crystalline material and multiplies the photo carriers generated by the optical absorption layer. The carrier multiplication layer is formed of a multilayer film obtained by stacking films each having plural layers which are composed of non-single crystalline Zn.sub.x Cd.sub.1-x M (0.ltoreq.x.ltoreq.1, M represents one selected from the group consisting of S, Se and Te) and are different in a composition ratio in accordance with a change in the value of x in said Zn.sub.x Cd.sub.1-x M, whereby a band discontinuity .DELTA.Ec of the conduction band can be made larger, an ionization rate of electrons can be heightened and the place where ionization occurs can be specified. As a result, sensitivity increase, noise reduction and low voltage drive can be attained.
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patent: 5457327 (1995-10-01), Taguchi
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IEEE Transactions on Electron Devices, vol. 35, No. 8, Aug. 1988, "Amphorous Silicon/Silicon Carbide Superlattice Avalanche Photodiodes", JWO et al., pp. 1279-1283.
ITE'95: 1995 ITE Annual Convention, Annual Meeting Preprint of the Television Society, "Photocurrent Multiplication of a Si:H Staircase Photodiodes", Sawada et al., pp. 73-74.
Kyozuka Shinya
Miyamoto Yasuaki
Nakamura Takeshi
Yamada Takayuki
Fuji 'Xerox Co., Ltd.
Munson Gene M.
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