Non-single-crystalline semiconductor layer on a substrate and me

Details Non-single-crystalline semiconductor layer on a substrate and me Non-single-crystalline semiconductor layer on a substrate and me

1982-09-30

1984-07-24

Newsome, John H.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

252 623E, 357 2, 357 63, 427 86, B05D 306

Patent

active

044617836

ABSTRACT:
A non-single-crystalline semiconductor layer on a substrate and a method of making same. The non-single-crystalline compound semiconductor layer, which consists principally of silicon and tin and is expressed by Si.sub.x Sn.sub.1-x (0<x<1) and which has a smaller energy band gap than a non-single-crystalline semiconductor of silicon and contains hydrogen as a dangling bond neutralizer. The method of making the layer employs a reaction chamber where the substrate is disposed in the chamber. A mixture gas containing at least a semiconductor material gas consisting principally of silicon hydride and an additional semiconductor material gas consisting of tin hydroxide or halide is introduced into the chamber where an ionizing, high-frequency electromagnetic field is applied to the mixture gas to ionize it into a mixture gas plasma. The non-single-crystalline semiconductor layer is deposited on the substrate as the mixture gas plasma blows into the reaction chamber. The atmospheric pressure in the chamber is held below 1 atm and the temperature of the substrate is maintained below 700.degree. C. which is lower than the temperature of single-crystallizing the semiconductor material deposited on the substrate.

REFERENCES:
patent: 3836999 (1974-09-01), Nishizawa
patent: 4301323 (1981-11-01), Schink

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