Non-single crystal semiconductor device with sub-micron grain si

Details Non-single crystal semiconductor device with sub-micron grain si Non-single crystal semiconductor device with sub-micron grain si

1994-01-31

1995-08-15

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Non-single crystal, or recrystallized, material with...

257 59, 257 66, 257 72, 257 75, 257905, H01L 2100, H01L 29161, H01L 2934

Patent

active

054421985

ABSTRACT:
A MOS-FET transistor is produced on a substrate made of glass which has a non single crystal semiconductor film (2'). The average diameter of a crystal grain in said film is in the range between 0.5 times and 4 times of thickness of said film, and said average diameter is 250 .ANG.-8000 .ANG., and said film thickness is 500 .ANG.-2000 .ANG.. The density of oxygen in the semiconductor film (2') is less than 2.times.10.sup.19 /cm.sup.3. A photo sensor having PIN structure is also produced on the substrate, to provide an image sensor for a facsimile transmitter together with the transistors. Said film (2') is produced by placing amorphous silicon film on the glass substrate through CVD process using disilane gas, and effecting solid phase growth to said amorphous silicon film by heating the substrate together with said film in nitrogen gas atmosphere. The film (2') thus produced is subject to implantation of dopant for providing a transistor. The film thus produced has high mobility which provides high speed operation of a transistor, and low threshold voltage of a transistor.

REFERENCES:
patent: 4062034 (1977-12-01), Matsushita et al.
patent: 4176372 (1979-11-01), Matsushita et al.
patent: 4363828 (1982-12-01), Brodsky et al.
patent: 4693759 (1987-09-01), Noguchi et al.
patent: 4727044 (1988-02-01), Yamazaki
patent: 4814292 (1989-03-01), Sasaki et al.
patent: 4901133 (1990-02-01), Curran et al.
patent: 4992846 (1991-02-01), Sakakibara et al.
Kurihara, "Completely Integrated Contact-Type Linear a-Si/a-SiC Heterojunction Image Sensor" published on Mar. 23, 1989, in 23'd meeting in 147'th Committee of Amorphous Material in Japan Science Promotion Association. [no translation].
Sze, VLSI Technology, Mc Graw-Hill, 1988, pp. 233-235.
Scheid et al., Japanese Journal Of Applied Physics, vol. 29, No. 11, Nov. 1990, Tokyo JP, pp. L2105-L2107.
Katoh, IEEE Transactions On Electron Devices, vol. 35, No. 7, Jul. 1988, New York US pp. 923-928.
Nakanishi et al., Extended Abstracts, vol. 90, No. 1, May 1990, Princeton, N.J. US pp. 489-490.

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