Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1996-09-12
1998-06-09
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 72, 257347, 257352, 349 43, H01L 2976
Patent
active
057639043
ABSTRACT:
A thin film transistor is disclosed, that comprises a first substrate protection film formed on a transparent insulation substrate, a second substrate protection film formed in a predetermined shape on the first substrate protection film, a semiconductor film having a channel region and a contact region formed on the second substrate protection film, the channel region being surrounded by the contact region, a gate insulation film formed above the semiconductor film, the gate insulation film having an opening portion for the contact region of the semiconductor film, a gate electrode formed in a region corresponding to the channel region of the semiconductor film on the gate insulation film, an inter-layer insulation film formed above the gate electrode, the inter-layer insulation film having an opening portion for the contact region of the semiconductor film, and a plurality of electrodes formed on the inter-layer insulation film, the plurality of electrodes being connected to the contact region of the semiconductor film through the opening portion. The edge surfaces of the second substrate protection film may be tapered. A contact state between the gate electrode and the inter-layer insulation film is controlled corresponding to the concentration of hydrogen of the inter-layer insulation film.
REFERENCES:
patent: 5563427 (1996-10-01), Yudasaka et al.
patent: 5581102 (1996-12-01), Kusumoto
patent: 5583369 (1996-12-01), Yamazaki et al.
Gotou Yasumasa
Kawakyu Yoshito
Nakajima Mitsuo
Kabushiki Kaisha Toshiba
Tran Minh-Loan
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