Non-silicon semiconductor and high-k gate dielectric metal...

Details Non-silicon semiconductor and high-k gate dielectric metal... Non-silicon semiconductor and high-k gate dielectric metal...

2005-05-31

2005-05-31

Lebentritt, Michael S. (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S284000, C257S289000, C257S411000, C257SE21193, C257SE21266, C257SE21274, C438S303000

Reexamination Certificate

active

06900481

ABSTRACT:
A method for forming a transistor includes forming a gate dielectric layer over a portion of a semiconductor substrate, the substrate being substantially free of silicon; defining a gate electrode over a portion of the gate dielectric layer; and introducing ions into the substrate proximate the gate electrode to define source and drain regions. A transistor includes a semiconductor substrate that is substantially free of silicon and a gate dielectric layer over a portion of the substrate. The transistor can also include a gate electrode over a portion of the gate dielectric layer and introduce ions proximate the gate electrode, defining source and drain regions.

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Hubbard et al., “Thermodynamic stability of binary oxides in contact with silicon” J. Mater. Res., vol. 11, No. 11, Nov. 1996.

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