Non-silicon and silicon bonded structure and method of manufactu

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Heterojunction formed between semiconductor materials which...

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257183, 257499, H01L 2926

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active

052818349

ABSTRACT:
A non-silicon substrate is bonded to a silicon substrate with a stress-relief layer between the non-silicon substrate and the silicon substrate. The stress-relief layer reduces the stress between the non-silicon substrate and the silicon substrate. The stress is created by the difference in the thermal expansion coefficients of the two materials. The stress-relief layer may be a low melting point metal, a semiconductor layer having its thermal expansion coefficient close to the thermal expansion coefficient of the non-silicon substrate. The silicon substrate and/or the non-silicon substrate may have a silicon dioxide layer formed thereon such that the silicon dioxide layer is adjacent to the stress-relief layer.

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