Non-regrowth distributed feedback ridge semiconductor laser and

Coherent light generators – Particular resonant cavity – Distributed feedback

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372 46, H01S 3085, H01S 319

Patent

active

059828048

ABSTRACT:
There is provided a method of manufacturing a DFB semiconductor laser in which a laser substrate having a cladding layer which is a material for a ridge stripe stacked on an active is formed. The cladding layer as a material for a ridge stripe is etched to form a ridge stripe having flat portions on both sides thereof and a flat top portion protruding therefrom. A protective film and a resist layer are formed to cover the flat portions on both sides and the flat upper surface. A latent image of a grating having a periodic structure is formed in the direction in which the ridge stripe extends is formed on the resist layer. The resist layer is developed and the flat portions on both sides are etched to form a grating on both lateral portions and to remove the protective film. An electrode is formed on the flat top portion, the interface between the ridge strip and the electrode being a smooth surface.

REFERENCES:
patent: 5224115 (1993-06-01), Taylor et al.
patent: 5329542 (1994-07-01), Westbrook
patent: 5727015 (1998-03-01), Takahashi et al.
patent: 5870419 (1999-02-01), Nakayama

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