Non-quadrilateral light emitting devices of compound semiconduct

Details Non-quadrilateral light emitting devices of compound semiconduct Non-quadrilateral light emitting devices of compound semiconduct

1997-08-25

1999-07-27

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 79, H01L 2715, H01L 3300, H01L 2906

Patent

active

059294655

ABSTRACT:
A light emitting diode of compound semiconductor having a triangular-shaped top surface is disclosed. It is found that these dies have higher light output, better chip handleability, increased material usage and reduced slicing damages, when compared to prior art slicing geometry. Examples of suitable compound semiconductors are GaP, GaAsP, AlGaAs, etc., in the III-IV material group or ZnSe in the II-IV material group. In the preferred embodiment, the dies are sliced into equilaterial triangles.

REFERENCES:
patent: 4869253 (1989-09-01), Craig et al.
patent: 5631474 (1997-05-01), Saitoh

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